Selective anisotropic metal etch
US11658043B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2021 |
| Grant date | May 23, 2023 |
| Priority date | — |
| Expiry date | Jul 29, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of patterning a substrate is provided. The method includes modifying a surface of a metal-containing layer formed over a substrate positioned in a processing region of a processing chamber by exposing the surface of the metal-containing layer to plasma effluents of a chlorine-containing gas precursor and an oxygen-containing gas precursor to form a modified surface of the metal-containing layer. The method further includes directing plasma effluents of an inert gas precursor towards the modified surface of the metal-containing layer. The plasma effluents of the inert gas precursor are directed by applying a bias voltage to a substrate support holding the substrate. The method further includes anisotropically etching the modified surface of the metal-containing layer with the plasma effluents of the inert gas precursor to form a first recess having a first sidewall in the metal-containing layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.