Backside gate contact
US11658226B2 · kind B2 · utility
1Cited by
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20Claims
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Assignee
Inventors
Key dates
| Filing date | Apr 13, 2021 |
| Grant date | May 23, 2023 |
| Priority date | — |
| Expiry date | Jun 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor structures and methods of forming the same are provided. A semiconductor structure according to one embodiment includes first nanostructures, a first gate structure wrapping around each of the first nanostructures and disposed over an isolation structure, and a backside gate contact disposed below the first nanostructures and adjacent to the isolation structure. A bottom surface of the first gate structure is in direct contact with the backside gate contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.