Memory device including voltage control for diffusion regions associated with memory blocks
US11664076B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2021 |
| Grant date | May 30, 2023 |
| Priority date | — |
| Expiry date | Apr 30, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5628
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Some embodiments include apparatuses and methods of operating the apparatuses. One of the apparatuses includes a first memory block including first word lines for respective first memory cells of the first memory block; a second memory block including second word lines for respective second memory cells of the second memory block; first diffusion regions coupled to the first word lines; second diffusion regions adjacent the first diffusion regions, the second diffusion regions coupled to the second word lines; and a circuit to apply a voltage to the second diffusion regions in a write operation performed on the first memory block.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.