Method and apparatus for plasma etching
US11664232B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2020 |
| Grant date | May 30, 2023 |
| Priority date | — |
| Expiry date | Nov 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure comprising a substrate and a component which forms involatile metal etch products is plasma etched. A structure comprising a substrate and a component which forms involatile metal etch products is provided. The structure is positioned on a support within a chamber having a first gas inlet arrangement comprising one or more gas inlets and a second gas inlet arrangement comprising one or more gas inlets. The structure is etched by performing a first plasma etch step using a first etch process gas mixture which is only introduced into the chamber through the first gas inlet arrangement. The structure is further etched by performing a second plasma etch step using a second etch process gas mixture which is only introduced into the chamber through the second gas inlet arrangement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.