Front side laser-based wafer dicing
US11664276B2 · kind B2 · utility
0Cited by
14References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2018 |
| Grant date | May 30, 2023 |
| Priority date | — |
| Expiry date | Jan 7, 2041 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2103/56
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A semiconductor die includes a substrate having a semiconductor surface layer bon a front side with active circuitry including at last one transistor therein and a back side. The sidewall edges of the semiconductor die have at least one damage region pair including an angled damage feature region relative to a surface normal of the semiconductor die that is above a damage region that is more normal to the surface normal of the die as compared to the angled damage feature region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.