Patent · US Active

Method of manufacturing die seal ring

US11664333B2 · kind B2 · utility

0Cited by
45References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 24, 2020
Grant dateMay 30, 2023
Priority date
Expiry dateNov 12, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2221/1063
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method of manufacturing a die seal ring including the following steps is provided. A dielectric layer is formed on a substrate. Conductive layers stacked on the substrate are formed in the dielectric layer. Each of the conductive layers includes a first conductive portion and a second conductive portion. The second conductive portion is disposed on the first conductive portion. A width of the first conductive portion is smaller than a width of the second conductive portion. A first air gap is formed between a sidewall of the first conductive portion and the dielectric layer. A second air gap is formed between a sidewall of the second conductive portion and the dielectric layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.