Patent · US Active

Three-dimensional memory device and manufacturing method thereof

US11665905B2 · kind B2 · utility

0Cited by

2References

20Claims

0Family size

Assignee

YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

Qiguang Wang · 红钢城街道, CN
Lei Jin · 红钢城街道, CN
An Zhang · Kunshan, CN
Jianwei Lu · 红钢城街道, CN

Key dates

Filing date	Jul 28, 2021
Grant date	May 30, 2023
Priority date	—
Expiry date	Jul 28, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/516
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A three-dimensional (3D) memory device includes a substrate, an alternating conductive/dielectric stack disposed on the substrate, an epitaxial layer disposed on the substrate, a blocking layer disposed on the epitaxial layer and surrounded by the alternating conductive/dielectric stack, a trapping layer disposed on and surrounded by the blocking layer, a tunneling layer disposed on and surrounded by the trapping layer, and a semiconductor layer disposed on and in contact with the epitaxial layer and partially disposed on and surrounded by the tunneling layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.