An Zhang
19Patents
3h-index
20Co-inventors
56Inventor score
Filing activity: Mar 3, 2005 → Apr 28, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| USD517994S1 | Electrical connector | General | 24 | Expired |
| US7121887B2 | Electrical connector with shielding shell | Electricity | 8 | Expired |
| US10991438B1 | Method and memory used for reducing program disturbance by adjusting voltage of dummy word line | Electricity | 4 | Active |
| US10957408B1 | Non-volatile memory device and control method | Physics | 3 | Active |
| USD519083S1 | Electrical connector | General | 2 | Expired |
| US10943665B1 | Method of programming and verifying memory device and related memory device | Physics | 1 | Active |
| US11222674B2 | Method of sequentially biasing bias lines in memory device for program disturbance reduction and memory device utilizing same | Physics | 1 | Active |
| US11205494B2 | Non-volatile memory device and control method | Physics | 0 | Active |
| US12100456B2 | Memory device and erasing and verification method thereof | Physics | 0 | Active |
| US12412609B2 | Method of reducing program disturbance in memory device and memory device utilizing same | Physics | 0 | Active |
| US11121152B2 | Three-dimensional memory device and manufacturing method thereof | Electricity | 0 | Active |
| US11676646B2 | Method of reducing program disturbance in memory device and memory device utilizing same | Physics | 0 | Active |
| US11721403B2 | Method of programming and verifying memory device and related memory device | Physics | 0 | Active |
| US12354668B2 | Programming method for semiconductor device and semiconductor device | Physics | 0 | Active |
| US11626170B2 | Method and memory used for reducing program disturbance by adjusting voltage of dummy word line | Electricity | 0 | Active |
| US11665905B2 | Three-dimensional memory device and manufacturing method thereof | Electricity | 0 | Active |
| US11848058B2 | Method and memory used for reducing program disturbance by adjusting voltage of dummy word line | Electricity | 0 | Active |
| US11158380B1 | Memory device and erasing and verification method thereof | Physics | 0 | Active |
| US11676665B2 | Memory device and erasing and verification method thereof | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.