Condition selectable backside gas
US11666952B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2020 |
| Grant date | Jun 6, 2023 |
| Priority date | — |
| Expiry date | May 21, 2041 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB08B2209/08
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of semiconductor processing may include performing a process on a semiconductor substrate. The semiconductor substrate may be seated on a substrate support positioned within a processing region of a semiconductor processing chamber. The methods may include flowing a first backside gas through the substrate support at a first flow rate. The methods may include removing the semiconductor substrate from the processing region of the semiconductor processing chamber. The methods may include performing a plasma cleaning operation within the processing region of the semiconductor processing chamber. The methods may include flowing a second backside gas through the substrate support at a second flow rate. At least a portion of the second backside gas may flow into the processing region through accesses in the substrate support.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.