Simulation-assisted alignment between metrology image and design
US11669018B2 · kind B2 · utility
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24Claims
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Key dates
| Filing date | Jun 4, 2021 |
| Grant date | Jun 6, 2023 |
| Priority date | — |
| Expiry date | Jul 21, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70616
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method including: simulating an image or characteristics thereof, using characteristics of a design layout and of a patterning process, determining deviations between the image or characteristics thereof and the design layout or characteristics thereof; aligning a metrology image obtained from a patterned substrate and the design layout based on the deviations, wherein the patterned substrate includes a pattern produced from the design layout using the patterning process; and determining a parameter of a patterned substrate from the metrology image aligned with the design layout.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.