Patent · US Active

Multi-tier memory architecture

US11670363B2 · kind B2 · utility

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1References
20Claims
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Assignee

Inventors

Key dates

Filing dateApr 23, 2021
Grant dateJun 6, 2023
Priority date
Expiry dateApr 23, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/419
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Various implementations described herein are directed to a device having a multi-tiered memory structure with a first tier and a second tier arranged vertically in a stacked configuration. The device may have multiple transistors disposed in the multi-tiered memory structure with first transistors disposed in the first tier and second transistors disposed in the second tier. The device may have a single interconnect that vertically couples the first transistors in the first tier to the second transistors in the second tier.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.