Electronic devices comprising adjoining oxide materials and related systems

US11672118B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Shyam Surthi · Boise, US
• Richard J. Hill · Boise, US
• Gurtej S. Sandhu · Boise, US
• Byeung Chul Kim · Boise, US
• Francois H. Fabreguette · Boise, US
• Chris M. Carlson · Boise, US
• Michael E. Koltonski · Boise, US
• Shane J. Trapp · Boise, US

Key dates

• Filing date: Sep 4, 2020
• Grant date: Jun 6, 2023
• Expiry date: Jan 31, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/693

Abstract

An electronic device comprising a cell region comprising stacks of alternating dielectric materials and conductive materials. A pillar region is adjacent to the cell region and comprises storage node segments adjacent to adjoining oxide materials and adjacent to a tunnel region. The storage node segments are separated by a vertical portion of the tunnel region. A high-k dielectric material is adjacent to the conductive materials of the cell region and to the adjoining oxide materials of the pillar region. Additional electronic devices are disclosed, as are methods of forming an electronic device and related systems.