Material for forming organic film, substrate for manufacturing semiconductor apparatus, method for forming organic film, and patterning process
US11676814B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 2020 |
| Grant date | Jun 13, 2023 |
| Priority date | — |
| Expiry date | Jun 3, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/033
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A material for forming an organic film using a polymer including an imide group for forming an organic underlayer film that cures under film-forming conditions in the air and in an inert gas, generates no by-product in heat resistance and embedding and flattening characteristics of a pattern formed on a substrate, also adhesiveness to a substrate for manufacturing a semiconductor apparatus, a method for forming an organic film, and a patterning process. The material includes (A) a polymer having a repeating unit represented by the following general formula (1A) whose terminal group is a group represented by either of the following general formulae (1B) or (1C), and (B) an organic solvent: wherein, W1 represents a tetravalent organic group, and W2 represents a divalent organic group: wherein, R1 represents any of the groups represented by the following formula (1D), and two or more of R1s may be used in combination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.