Diffusion barrier for semiconductor device and method
US11676898B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2020 |
| Grant date | Jun 13, 2023 |
| Priority date | — |
| Expiry date | Jul 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming an insulating layer over a conductive feature; etching the insulating layer to expose a first surface of the conductive feature; covering the first surface of the conductive feature with a sacrificial material, wherein the sidewalls of the insulating layer are free of the sacrificial material; covering the sidewalls of the insulating layer with a barrier material, wherein the first surface of the conductive feature is free of the barrier material, wherein the barrier material includes tantalum nitride (TaN) doped with a transition metal; removing the sacrificial material; and covering the barrier material and the first surface of the conductive feature with a conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.