Semiconductor device and method for fabricating the same
US11676920B2 · kind B2 · utility
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Key dates
| Filing date | Jan 26, 2021 |
| Grant date | Jun 13, 2023 |
| Priority date | — |
| Expiry date | Jan 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/85948
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes the steps of first forming an aluminum (Al) pad on a substrate, forming a passivation layer on the substrate and an opening exposing the Al pad, forming a cobalt (Co) layer in the opening and on the Al pad, bonding a wire onto the Co layer, and then performing a thermal treatment process to form a Co—Pd alloy on the Al pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.