Via-in-via structure for high density package integrated inductor
US11676950B2 · kind B2 · utility
0Cited by
2References
23Claims
0Family size
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Key dates
| Filing date | Sep 28, 2017 |
| Grant date | Jun 13, 2023 |
| Priority date | — |
| Expiry date | Oct 20, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus is provided which comprises: a plurality of plated through holes; a material with magnetic properties adjacent to the plurality of plated through holes; and one or more conductors orthogonal to a length of the plurality of plated through holes, the one or more conductors to couple one plated through hole of the plurality with another plated through hole of the plurality such that an inductor is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.