Method for preparing semiconductor device with T-shaped buried gate electrode
US11677008B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2021 |
| Grant date | Jun 13, 2023 |
| Priority date | — |
| Expiry date | Nov 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
Abstract
The present disclosure provides a method for preparing a semiconductor device with a T-shaped buried gate electrode. The method includes forming an isolation structure in a semiconductor substrate to define an active region, and forming a doped region in the active region. The method also includes etching the semiconductor substrate to form a first trench and a second trench. The first trench has a first portion extending across the doped region and a second portion extending away from the first portion, and the second trench has a third portion extending across the doped region and a fourth portion extending away from the third portion. The method further includes forming a first gate electrode in the first trench and a second gate electrode in the second trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.