Regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes

US11677042B2 · kind B2 · utility

Assignee

• Meta Platforms Technologies, LLC · US

Inventors

• Markus Broell · Cork, IE
• Michael Jason Grundmann · San Jose, US
• David Hwang · Fort Collins, US
• Stephan Lutgen · Regensburg, DE
• Brian Matthew Mcskimming · Redmond, US
• Anurag Tyagi · Kirkland, US

Key dates

• Filing date: Mar 29, 2020
• Grant date: Jun 13, 2023
• Expiry date: Jan 13, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/819

Abstract

Disclosed herein are methods, systems, and apparatuses for an light emitting diode (LED) array apparatus. In some embodiments, the LED array apparatus may include a plurality of mesas etched from a layered epitaxial structure. The layered epitaxial structure may include a P-type doped semiconductor layer, a active layer, and an N-type doped semiconductor layer. The LED array apparatus may also include one or more regrowth semiconductor layers, including a first regrowth semiconductor layer, which may be grown epitaxially over etched facets of the plurality of mesas. In some cases, for each mesa, the first regrowth semiconductor layer may overlay etched facets of the P-type doped semiconductor layer, the active layer, and the N-type doped semiconductor layer, around an entire perimeter of the mesa.