Structure for integrated microphone
US11678133B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2020 |
| Grant date | Jun 13, 2023 |
| Priority date | — |
| Expiry date | Sep 23, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04R2307/027
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides one embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate. A silicon oxide layer formed on one side of the first silicon substrate. A second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates. A diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates such that the first plate and the diaphragm are configured to form a capacitive microphone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.