Method of manufacturing magnetic tunnel junction and magnetic tunnel junction
US11678583B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2022 |
| Grant date | Jun 13, 2023 |
| Priority date | — |
| Expiry date | Feb 1, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of manufacturing a magnetic tunnel junction that simultaneously realizes removal of oxides on side walls of a magnetic layer and formation of a protective film and prevents deterioration of magnetic characteristics. The method includes: a first step 802 of etching a stacked film including a first magnetic layer, a MgO barrier layer, and a second magnetic layer stacked in order by plasma etching using an oxidizing gas to form the magnetic tunnel junction; and a second step 803 of simultaneously introducing an organic acid gas which is an n-valent acid and a precursor gas having a corresponding metal element valence of m, to form a first protective film on side walls of the magnetic tunnel junction. In the second step, the precursor gas is introduced at a molar ratio of n/m or more with respect to 1 mole of the organic acid gas introduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.