Patent · US Active

Semiconductor structure

US11682660B2 · kind B2 · utility

0Cited by
2References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 21, 2020
Grant dateJun 20, 2023
Priority date
Expiry dateAug 24, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3011
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The present disclosure provides a semiconductor structure including a first substrate having a first surface, a first semiconductor device package disposed on the first surface of the first substrate, and a second semiconductor device package disposed on the first surface of the first substrate. The first semiconductor device package and the second semiconductor device package have a first signal transmission path through the first substrate and a second signal transmission path insulated from the first substrate. The present disclosure also provides an electronic device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.