Inventor · Tokyo, JP

Shang Chen

23Patents
13h-index
18Co-inventors
70Inventor score

Filing activity: Mar 14, 2013 → Aug 19, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US10395917B2 Si precursors for deposition of SiN at low temperatures Electricity 388 Active
US10014212B2 Selective deposition of metallic films Electricity 374 Active
US9824881B2 Si precursors for deposition of SiN at low temperatures Electricity 284 Active
US10424477B2 Si precursors for deposition of SiN at low temperatures Electricity 282 Active
US10741386B2 Deposition of SiN Electricity 265 Active
US9803277B1 Reaction chamber passivation and selective deposition of metallic films Electricity 74 Active
US9805974B1 Selective deposition of metallic films Electricity 52 Active
US10041166B2 Reaction chamber passivation and selective deposition of metallic films Electricity 51 Active
US10480064B2 Reaction chamber passivation and selective deposition of metallic films Electricity 43 Active
US9564309B2 Si precursors for deposition of SiN at low temperatures Electricity 23 Active
US9576792B2 Deposition of SiN Electricity 16 Active
US9905416B2 Si precursors for deposition of SiN at low temperatures Electricity 15 Active
US10793946B1 Reaction chamber passivation and selective deposition of metallic films Electricity 15 Active
US10410857B2 Formation of SiN thin films Electricity 12 Active
US10262854B2 Deposition of SiN Electricity 3 Active
US11069522B2 Si precursors for deposition of SiN at low temperatures Electricity 2 Active
US11133181B2 Formation of SiN thin films Electricity 2 Active
US9947582B1 Processes for preventing oxidation of metal thin films Electricity 1 Active
US11289327B2 Si precursors for deposition of SiN at low temperatures Electricity 1 Active
US11367613B2 Deposition of SiN Electricity 0 Active
US11784043B2 Formation of SiN thin films Electricity 0 Active
US11587783B2 Si precursors for deposition of SiN at low temperatures Electricity 0 Active
US11682660B2 Semiconductor structure Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.