Semiconductor device having a high breakdown voltage

US11682695B2 · kind B2 · utility

Assignee

• Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

• Ahmed Mahmoud · Freising, DE
• Franz Hirler · Isen, DE
• Marco Mueller · Villach, AT
• Rolf Weis · Dresden, DE

Key dates

• Filing date: May 26, 2021
• Grant date: Jun 20, 2023
• Expiry date: Jul 3, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/82

Abstract

A semiconductor device includes a layer stack with first semiconductor layers and second semiconductor layers of opposite doping types arranged alternatingly. A first semiconductor region of a first semiconductor device adjoins the first semiconductor layers, and has a first end arranged in a first region of the first semiconductor device and extends from the first end into a second region of the first semiconductor device. Second semiconductor regions of the first semiconductor device adjoin at least one of the second semiconductor layers. A third semiconductor region of the first semiconductor device adjoins the first semiconductor layers. The first semiconductor region extends from the first region into the second region and is spaced apart from the third semiconductor region. The second semiconductor regions are arranged between, and spaced apart from, the third and first semiconductor regions. An average doping concentration along a shortest path between the first and third semiconductor regions in at least one of the first or second semiconductor layers in the first region differs from an average doping concentration along a shortest path between the first and third semicondu…