On-die formation of single-crystal semiconductor structures
US11683937B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2021 |
| Grant date | Jun 20, 2023 |
| Priority date | — |
| Expiry date | Aug 9, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods, systems, and devices for on-die formation of single-crystal semiconductor structures are described. In some examples, a layer of semiconductor material may be deposited above one or more decks of memory cells and divided into a set of patches. A respective crystalline arrangement of each patch may be formed based on nearly or partially melting the semiconductor material, such that nucleation sites remain in the semiconductor material, from which respective crystalline arrangements may grow. Channel portions of transistors may be formed at least in part by doping regions of the crystalline arrangements of the semiconductor material. Accordingly, operation of the memory cells may be supported by lower circuitry (e.g., formed at least in part by doped portions of a crystalline semiconductor substrate), and upper circuitry (e.g., formed at least in part by doped portions of a semiconductor deposited over the memory cells and formed with a crystalline arrangement in-situ).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.