Method for automated critical dimension measurement on a substrate for display manufacturing, method of inspecting a large area substrate for display manufacturing, apparatus for inspecting a large area substrate for display manufacturing and method of operating thereof
US11687008B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2018 |
| Grant date | Jun 27, 2023 |
| Priority date | — |
| Expiry date | Mar 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/24592
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
According to an embodiment, a method for automated critical dimension measurement on a substrate for display manufacturing is provided. The method includes scanning a first field of view having a first size with a charged particle beam to obtain a first image having a first resolution of a first portion of the substrate for display manufacturing; determining a pattern within the first image, the pattern having a first position; scanning a second field of view with the charged particle beam to obtain a second image of a second portion of the substrate, the second field of view has a second size smaller than the first size and has a second position provided relative to the first position, the second image has a second resolution higher than the first resolution; and determining a critical dimension of a structure provided on the substrate from the second image.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.