Etching method and substrate processing apparatus
US11688650B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2020 |
| Grant date | Jun 27, 2023 |
| Priority date | — |
| Expiry date | Jul 1, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67253
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching a substrate, on which a multilayered film is formed, is provided. The multilayered film includes a silicon-containing insulating layer, an undercoat layer provided under the silicon-containing insulating layer, and a mask layer provided above the silicon-containing insulating layer. When the substrate is loaded into a process chamber, a process gas containing a fluorocarbon gas and a noble gas is supplied into the process chamber, and the multilayered film is etched by the plasma formed from the process gas. The noble gas contains a first gas having higher ionization energy than Ar gas, and momentum of an ionized particle of the first gas is less than momentum of an ionized particle of Ar gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.