High electron mobility transistor and fabrication method thereof
US11688802B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2021 |
| Grant date | Jun 27, 2023 |
| Priority date | — |
| Expiry date | Nov 29, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/68
Abstract
A method for forming a high electron mobility transistor is disclosed. A substrate is provided. A channel layer is formed on the substrate. An electron supply layer is formed on the channel layer. A dielectric passivation layer is formed on the electron supply layer. A gate recess is formed into the dielectric passivation layer and the electron supply layer. A surface modification layer is conformally deposited on an interior surface of the gate recess. The surface modification layer is then subjected to an oxidation treatment or a nitridation treatment. A P-type GaN layer is formed in the gate recess and on the surface modification layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.