Magnetoresistance effect element and magnetic memory
US11690299B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Dec 14, 2018 |
| Grant date | Jun 27, 2023 |
| Priority date | — |
| Expiry date | Dec 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/20
Abstract
Provided is an X-type 3-terminal STT-MRAM (spin orbital torque magnetization reversal component) having a high thermal stability index Δ and a low writing current IC in a balanced manner. A magnetoresistance effect element has a configuration of channel layer (1)/barrier layer non adjacent magnetic layer (2b)/barrier layer adjacent magnetic layer (2a)/barrier layer (3).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.