Patent · US Active

Electronic chip with two phase change memories

US11690303B2 · kind B2 · utility

0Cited by
6References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 29, 2021
Grant dateJun 27, 2023
Priority date
Expiry dateMar 29, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N70/8828

Abstract

An electronic chip includes at least a first array of first elementary cells and a second array of second elementary cells. The first and second elementary cells form two types of phase change memory having a storage element formed by a volume of phase change material having either a crystalline state or an amorphous state depending on the bit stored. Each first elementary cell includes a volume of a first phase change material, and each second elementary cell includes a volume of a second phase change material that is different from the first material. Each elementary cell includes a heating connector configured for the passage of a heating current adapted to cause a phase change of the volume of phase change material of the elementary cell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.