Plasma induced modification of silicon carbide surface

US11692267B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Francis Kanyiri Mungai · San Jose, US
• Vijayabhaskara Venkatagiriyappa · Kanchinakote, IN
• Yung-Cheng Hsu · New Taipei, TW
• Keiichi Tanaka · Toyama, JP
• Mario David Silvetti · Fountain Hills, US
• Mihaela Balseanu · Sunnyvale, US

Key dates

• Filing date: Dec 31, 2020
• Grant date: Jul 4, 2023
• Expiry date: Jan 1, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/68785
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Methods for modifying a susceptor having a silicon carbide (SiC) surface comprising exposing the silicon carbide surface (SiC) to an atmospheric plasma are described. The method increases the atomic oxygen content of the silicon carbide (SiC) surface.