Substrate processing method and substrate processing apparatus
US11694890B2 · kind B2 · utility
1Cited by
8References
11Claims
0Family size
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Key dates
| Filing date | Mar 25, 2020 |
| Grant date | Jul 4, 2023 |
| Priority date | — |
| Expiry date | Jul 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing method for forming a nitride film on a substrate, includes: a raw material gas supply step of supplying a raw material gas containing an element to be nitrided; a hydrogen gas supply step of, after the raw material gas supply step, supplying a hydrogen gas activated by plasma; a thermal nitriding step of supplying a first nitriding gas containing nitrogen activated by heat and nitriding the element; and a plasma nitriding step of supplying a second nitriding gas containing nitrogen activated by plasma and nitriding the element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.