Negative-working ultra thick film photoresist
US11698586B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2019 |
| Grant date | Jul 11, 2023 |
| Priority date | — |
| Expiry date | Mar 20, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/031
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A negative working, aqueous base developable, photosensitive photoresist composition and a process of using this composition to produce lithographic images, where this composition is one comprising: a) a polymer containing the four repeat units of structures (1), (2), (3), and (4), but no other types of repeat units; wherein v, x, y and z, respectively, represent the mole % of each repeat units of structures (1), (2), (3) and (4); b) a radical photo-initiator component, which is comprised of at least one radical photo initiator which is activated by a broad absorption of radiation from about 360 nm to about 440 nm; c) a crosslinker component which is either a mixture consisting of crosslinkers of structure (5), (6) and (7), or a single crosslinker of structure (8); d) a radical inhibitor component; e) an optional surfactant component; f) an optional dissolution promoter component; and g) a solvent. The invention also relates to the process of using this negative resist to produce lithographic images.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.