Semiconductor memory device and memory system including the same
US11699472B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2021 |
| Grant date | Jul 11, 2023 |
| Priority date | — |
| Expiry date | Nov 15, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/2254
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device includes a quadrature error correction circuit, a clock generation circuit and a data input/output (I/O) buffer. The quadrature error correction circuit performs a locking operation to generate a first corrected clock signal and a second corrected clock signal by adjusting a skew and a duty error of a first through fourth clock signals generated based on a data clock signal and performs a relocking operation to lock the second corrected clock signal to the first corrected clock signal in response to a relock signal. The clock generation circuit generates an output clock signal and a strobe signal based on the first corrected clock signal and the second corrected clock signal. The data I/O buffer generates a data signal by sampling data from a memory cell array based on the output clock signal and transmits the data signal and the strobe signal to a memory controller.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.