Etching aluminum nitride or aluminum oxide to generate an aluminum ion beam
US11699563B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2021 |
| Grant date | Jul 11, 2023 |
| Priority date | — |
| Expiry date | Jun 4, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implantation system, ion source, and method are provided, where an ion source is configured to ionize an aluminum-based ion source material and to form an ion beam and a by-product including a non-conducting material. An etchant gas mixture has a predetermined concentration of fluorine and a noble gas that is in fluid communication with the ion source. The predetermined concentration of fluorine is associated with a predetermined health safety level, such as approximately a 20% maximum concentration of fluorine. The etchant gas mixture can have a co-gas with a concentration less than approximately 5% of argon. The aluminum-based ion source material can be a ceramic member, such as a repeller shaft, a shield, or other member within the ion source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.