Patent · US Active

Fluorine based molecular co-gas when running dimethylaluminum chloride as a source material to generate an aluminum ion beam

US11699565B2 · kind B2 · utility

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20Claims
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Assignee

Inventors

Key dates

Filing dateOct 29, 2021
Grant dateJul 11, 2023
Priority date
Expiry dateDec 31, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/05
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a liquid that transitions into vapor phase at room temperature. An ion source receives and ionizes the gaseous aluminum-based ion source material to form an ion beam. A low-pressure gas bottle supplies the DMAC as a gas to an arc chamber of the ion source by a primary gas line. A separate, secondary gas line supplies a co-gas, such as a fluorine-containing molecule, to the ion source, where the co-gas and DMAC reduce an energetic carbon cross-contamination and/or increase doubly charged aluminum.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.