Method of reducing undesired light influence in extreme ultraviolet exposure
US11703762B2 · kind B2 · utility
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2References
20Claims
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Key dates
| Filing date | Oct 24, 2019 |
| Grant date | Jul 18, 2023 |
| Priority date | — |
| Expiry date | Jul 18, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70958
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of generating a layout pattern includes disposing a photoresist layer of a resist material on a substrate and disposing a top layer over of the photoresist layer. The top layer is transparent for extreme ultraviolet (EUV) radiation and the top layer is opaque for deep ultraviolet (DUV) radiation. The method further includes irradiating the photoresist layer with radiation generated from an EUV radiation source. The radiation passes through the top layer to expose the photoresist layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.