Methods for controllable metal and barrier-liner recess
US11705366B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2021 |
| Grant date | Jul 18, 2023 |
| Priority date | — |
| Expiry date | Nov 6, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76897
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of etching a metal layer and a metal-containing barrier layer to a predetermined depth are described. In some embodiments, the metal layer and metal-containing barrier layer are formed on a substrate with a first dielectric and a second dielectric thereon. The metal layer and the metal-containing barrier layer formed within a feature in the first dielectric and the second dielectric. In some embodiments, the metal layer and metal-containing barrier layer can be sequentially etched from a feature formed in a dielectric material. In some embodiments, the sidewalls of the feature formed in a dielectric material are passivated to change the adhesion properties of the dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.