Patent · US Active

Single fin structures

US11705508B2 · kind B2 · utility

1Cited by

4References

19Claims

0Family size

Assignee

GLOBALFOUNDRIES U.S. Inc. · US

Inventors

Haiting Wang · Clifton Park, US
Hong Yu · Rexford, US
Zhenyu Hu · Leonberg, DE

Key dates

Filing date	Aug 10, 2021
Grant date	Jul 18, 2023
Priority date	—
Expiry date	Aug 26, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/62
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present disclosure generally relates to semiconductor structures and, more particularly, to single fin structures and methods of manufacture. The structure includes: an active single fin structure; a plurality of dummy fin structures on opposing sides of the active single fin structure; source and drain regions formed on the active single fin structure and the dummy fin structures; recessed shallow trench isolation (STI) regions between the dummy fin structures and the active single fin structure and below a surface of the dummy fin structures; and contacts formed on the source and drain regions of the active single fin structure with a spacing of at least two dummy fin structures on opposing sides of the contacts.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.