Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device
US11711065B2 · kind B2 · utility
4Cited by
3References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2021 |
| Grant date | Jul 25, 2023 |
| Priority date | — |
| Expiry date | Aug 19, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/085
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.