Filamentary type non-volatile memory device

US11711927B2 · kind B2 · utility

Assignees

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
• UNIVERSITE GRENOBLE ALPES · FR
• CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE · FR

Inventors

• Gabriele Navarro · Moirans, FR
• Nicolas Guillaume · Seattle, US
• Serge Blonkowski · Grenoble, FR
• Patrice Gonon · Saint-Égrève, FR
• Eric Jalaguier · Meylan, FR

Key dates

• Filing date: Aug 28, 2020
• Grant date: Jul 25, 2023
• Expiry date: Jun 4, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B63/80

Abstract

A filament type non-volatile memory device, includes a first electrode, a second electrode and an active layer extending between the first electrode and the second electrode, the active layer electrically interconnecting the first electrode to the second electrode, the device being suitable for having: a low resistive state, in which a conducting filament electrically interconnecting the first electrode to the second electrode uninterruptedly extends from end to end through the active layer, the filament having a low electric resistance, and a highly resistive state, in which the filament is broken, the filament having a high electric resistance. The device further includes a shunt resistance electrically connected in parallel to the active layer, between the first electrode and the second electrode.