Gas phase etch with controllable etch selectivity of metals
US11715643B2 · kind B2 · utility
0Cited by
1References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2020 |
| Grant date | Aug 1, 2023 |
| Priority date | — |
| Expiry date | Jun 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a substrate having a working surface exposing a metal layer and having at least one other material exposed or underneath the metal layer; and differentially etching the metal layer relative to the other material by exposing the substrate to a controlled gas-phase environment containing an anhydrous halogen compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.