Plasma processing method and plasma processing apparatus
US11721522B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2022 |
| Grant date | Aug 8, 2023 |
| Priority date | — |
| Expiry date | Jun 8, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A capacitively coupled plasma processing apparatus includes a chamber; a gas supply that supplies an inert gas into the chamber; a substrate support including a lower electrode; an upper electrode provided above the substrate support and including silicon; a first radio-frequency power supply electrically connected to the upper electrode; a second radio-frequency power supply electrically connected to the lower electrode; a bias power supply that applies a negative bias voltage to the upper electrode; and a controller that controls an overall operation of the capacitively coupled plasma processing apparatus such that the silicon-containing material is deposited on sidewalls of a mask of the substrate to narrow an opening formed on the mask by an amount greater in a second direction than in a first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.