Sensorless RF impedance matching network
US11721525B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2021 |
| Grant date | Aug 8, 2023 |
| Priority date | — |
| Expiry date | Apr 14, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for plasma processing substrate are provided herein. The method comprises supplying from an RF power source RF power, measuring at the RF power source a reflected power at the first power level, comparing the measured reflected power to a first threshold, transmitting a result of the comparison to a controller, setting at least one variable capacitor to a first position based on the comparison of the measured reflected power at the first power level to the first threshold, supplying from the RF power source the RF power at a second power level for plasma processing the substrate, measuring at the RF power source the reflected power at the second power level, comparing the measured reflected power at the second power level to a second threshold different from the first threshold, transmitting a result of the comparison, setting at the matching network the at least one variable capacitor to a second position.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.