Bipolar junction transistors including a stress liner

US11721722B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Man Gu · Malta, US
• Jagar Singh · Clifton Park, US
• Haiting Wang · Clifton Park, US
• Jeffrey B. Johnson · Hague, US

Key dates

• Filing date: Nov 11, 2021
• Grant date: Aug 8, 2023
• Expiry date: Jan 19, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/791

Abstract

Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes a collector having a raised portion, an emitter having a raised portion, and a base laterally arranged between the raised portion of the emitter and the raised portion of the collector. The base includes an intrinsic base layer and an extrinsic base layer stacked with the intrinsic base layer. The structure further includes a stress liner positioned to overlap with the raised portion of the collector, the raised portion of the emitter, and the extrinsic base layer.