Electronic device including a gate structure and a process of forming the same
US11721736B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2021 |
| Grant date | Aug 8, 2023 |
| Priority date | — |
| Expiry date | Jun 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electronic device can include a gate structure. In an embodiment, the gate structure can include a gate electrode including a doped semiconductor material, a metal-containing member, a pair of conductive sidewall spacers. The first metal-containing member can overlie the gate electrode. The conductive sidewall spacers can overlie the gate electrode and along opposite sides of the first metal-containing member. In another embodiment, the gate structure can include a gate electrode, a first metal-containing member overlying the gate electrode, and a second metal-containing member overlying the first metal-containing member. The first metal-containing member can have a length that is greater than the length of the second metal-containing member and substantially the same length as the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.