CMP composition including a novel abrasive
US11725116B2 · kind B2 · utility
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3References
32Claims
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Key dates
| Filing date | Mar 30, 2021 |
| Grant date | Aug 15, 2023 |
| Priority date | — |
| Expiry date | Nov 20, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A chemical mechanical polishing composition includes a liquid carrier and colloidal silica particles dispersed in the liquid carrier. The colloidal silica particles have a positive charge of at least 10 mV in the liquid carrier and may be characterized as having: (i) a number average aspect ratio of greater than about 1.25 and (ii) a normalized particle size span by weight of greater than about 0.42. The polishing composition may further optionally include an iron-containing accelerator and a tungsten etch inhibitor, for example, when the polishing composition is a tungsten CMP composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.