Patent · US Active

Multi-resolution overlay metrology targets

US11726410B2 · kind B2 · utility

1Cited by

2References

22Claims

0Family size

Assignee

KLA Corporation · US

Inventors

Eitan Hajaj · Ashkelon, IL
Amnon Manassen · Haifa, IL
Shlomo Eisenbach · Milpitas, US
Anna Golotsvan · Rekhasim, IL
Yoav Grauer · Haifa, IL
Eugene Maslovsky · Haifa, IL

Key dates

Filing date	Jun 17, 2021
Grant date	Aug 15, 2023
Priority date	—
Expiry date	Jun 18, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH01L22/12
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A product includes at least one semiconductor substrate, multiple thin-film layers disposed on the at least one substrate, and an overlay target formed in at least one of the thin-film layers. The overlay target includes a first sub-target having a first center of symmetry and including first target features having a first linewidth, and a second sub-target having a second center of symmetry coincident with the first center of symmetry and including second target features, which have a second linewidth, greater than the first linewidth, and are adjacent to but non-overlapping with the first target features.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.