Process chamber for cyclic and selective material removal and etching
US11728139B2 · kind B2 · utility
1Cited by
7References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2021 |
| Grant date | Aug 15, 2023 |
| Priority date | — |
| Expiry date | Aug 29, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6831
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for substrate etching are described herein. A processing chamber described herein includes a source module, a process module, a flow module, and an exhaust module. An RF source may be coupled to the chamber and a remote plasma may be generated in the source module and a direct plasma may be generated in the process module. Cyclic etching processes described may use alternating radical and direct plasmas to etch a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.