Wafer thinning apparatus having feedback control
US11728172B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2020 |
| Grant date | Aug 15, 2023 |
| Priority date | — |
| Expiry date | Oct 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
An apparatus includes a first metrology tool configured to measure an initial thickness of a wafer. The apparatus includes a controller connected to the first metrology tool and configured to calculate a polishing time based on a material removal rate, a predetermined thickness and the initial thickness of the wafer. The apparatus includes a polishing tool connected to the controller and configured to polish the wafer for a first duration equal to the polishing time. The apparatus includes a second metrology tool connected to the controller and configured to measure a polished thickness. The controller is configured for receiving the initial thickness from the first metrology tool and the polished thickness from the second metrology tool, updating the material removal rate based on the predetermined thickness, the polishing time and the polished thickness, and calculating an etching time for etching the polished wafer using the polished thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.