Patent · US Active

Device and method for analyzing a defect of a photolithographic mask or of a wafer

US11733186B2 · kind B2 · utility

0Cited by

12References

32Claims

0Family size

Assignee

Carl Zeiss SMT GmbH · DE

Inventors

Gabriel Baralia · Darmstadt, DE
Christof Baur · Darmstadt, DE
Klaus Edinger · Lorsch, DE
Thorsten Hofmann · Rodgau, DE
Michael Budach · Hanau, DE

Key dates

Filing date	Apr 1, 2021
Grant date	Aug 22, 2023
Priority date	—
Expiry date	Jun 18, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/334
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

The present application relates to a scanning probe microscope comprising a probe arrangement for analyzing at least one defect of a photolithographic mask or of a wafer, wherein the scanning probe microscope comprises: (a) at least one first probe embodied to analyze the at least one defect; (b) means for producing at least one mark, by use of which the position of the at least one defect is indicated on the mask or on the wafer; and (c) wherein the mark is embodied in such a way that it may be detected by a scanning particle beam microscope.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.